| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIII |
| Packaging | Cut Tape (CT) |
| Part Status | Discontinued at Digi-Key |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 330mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 1.2nC @ 4V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 43pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150mW (Ta) |
| Rds On (Max) @ Id, Vgs | 1.31 Ohm @ 100mA, 4.5V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VESM |
| Package / Case | SOT-723 |
MOSFET P-CH 20V 0.33A VESM - P-Channel 20V 330mA (Ta) 150mW (Ta) Surface Mount VESM
Транзисторы полевые SSM3J36MFV,L3F
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