| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIV |
| Packaging | Cut Tape (CT) |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | - |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 30V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Rds On (Max) @ Id, Vgs | 107 mOhm @ 2A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TSM |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
MOSFET N-CH 60V 2.5A TSM - N-Channel 60V 2.5A (Ta) 700mW (Ta) Surface Mount TSM
Транзисторы полевые SSM3K318T,LF
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