| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIII |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 1.9nC @ 4V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 123pF @ 15V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 500mW (Ta) |
| Rds On (Max) @ Id, Vgs | 133 mOhm @ 1A, 4V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | UFV |
| Package / Case | 6-SMD (5 Leads), Flat Lead |
MOSFET N-CH 30V 1.9A UFV - N-Channel 30V 1.9A (Ta) 500mW (Ta) Surface Mount UFV
Транзисторы полевые SSM5H12TU(TE85L,F)
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