| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 5V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Ta), 16.7W (Tc) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Base Part Number | SUD06N10 |
MOSFET N-CH 100V 6.5A DPAK - N-Channel 100V 6.5A (Tc) 1.25W (Ta), 16.7W (Tc) Surface Mount TO-252AA
Транзисторы полевые SUD06N10-225L-GE3
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