| Manufacturer | Vishay Siliconix |
| Series | TrenchFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A (Ta), 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta), 136.4W (Tc) |
| Rds On (Max) @ Id, Vgs | 18.5 mOhm @ 15A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252, (D-Pak) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
MOSFET N-CH 100V 8.2A DPAK - N-Channel 100V 8.2A (Ta), 50A (Tc) 3W (Ta), 136.4W (Tc) Surface Mount TO-252, (D-Pak)
Транзисторы полевые SUD50N10-18P-GE3
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