| Manufacturer | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 300V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 100W (Tc) |
| Rds On (Max) @ Id, Vgs | 340 mOhm @ 5.8A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I-Pak |
| Package / Case | TO-251-3 Stub Leads, IPak |
MOSFET N CH 600V 11.5A IPAK - N-Channel 600V 11.5A (Ta) 100W (Tc) Through Hole I-Pak
Транзисторы полевые TK12Q60W,S1VQ
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