Manufacturer | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Packaging | Tube |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 15.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.7V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 300V |
FET Feature | Super Junction |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
MOSFET N CH 600V 15.8A TO-220SIS - N-Channel 600V 15.8A (Ta) 40W (Tc) Through Hole TO-220SIS
Транзисторы полевые TK16A60W5,S4VX
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