| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 60V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Rds On (Max) @ Id, Vgs | 9.4 mOhm @ 21A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
MOSFET N CH 120V 88A TO-220 - N-Channel 120V 88A (Tc) 140W (Tc) Through Hole TO-220
Транзисторы полевые TK42E12N1,S1X
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