| Manufacturer | Toshiba Semiconductor and Storage |
| Series | π-MOSVII |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7 Ohm @ 2A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
| Package / Case | TO-220-3 Full Pack |
MOSFET N-CH 600V 4A TO-220SIS - N-Channel 600V 4A (Ta) 35W (Tc) Through Hole TO-220SIS
Транзисторы полевые TK4A60D(STA4,Q,M)
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