| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 10V |
| FET Feature | Schottky Diode (Body) |
| Power Dissipation (Max) | - |
| Rds On (Max) @ Id, Vgs | 10.1 mOhm @ 6A, 10V |
| Operating Temperature | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP (5.5x6.0) |
| Package / Case | 8-SOIC (0.173", 4.40mm Width) |
MOSFET N-CH 30V 12A 8SOP - N-Channel 30V 12A (Ta) Surface Mount 8-SOP (5.5x6.0)
Транзисторы полевые TPC8A06-H(TE12LQM)
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