| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIII-H |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 32nC @ 5V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 45W (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 20A, 4.5V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Package / Case | 8-PowerVDFN |
MOSFET N-CH 20V 40A SOP-8 ADV - N-Channel 20V 40A (Ta) 1.6W (Ta), 45W (Tc) Surface Mount 8-SOP Advance (5x5)
Транзисторы полевые TPCA8011-H(TE12LQM
Приведенная информация носит справочный характер и не является публичной офертой в соответствии с пунктом 2 статьи 437 ГК РФ. Общую стоимость с учётом доставки Вам сообщит менеджер.