| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVI-H |
| Packaging | Cut Tape (CT) |
| Part Status | Discontinued at Digi-Key |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2110pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 30W (Tc) |
| Rds On (Max) @ Id, Vgs | 11.3 mOhm @ 10A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Package / Case | 8-PowerVDFN |
MOSFET N-CH 40V 20A 8SOP - N-Channel 40V 20A (Ta) 1.6W (Ta), 30W (Tc) Surface Mount 8-SOP Advance (5x5)
Транзисторы полевые TPCA8052-H(TE12LQM
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