| Manufacturer | Toshiba Semiconductor and Storage |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.6W (Ta), 20W (Tc) |
| Rds On (Max) @ Id, Vgs | 33 mOhm @ 3A, 4.5V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Package / Case | 8-PowerVDFN |
MOSFET P-CH 12V 6A SOP-8 ADV - P-Channel 12V 6A (Ta) 1.6W (Ta), 20W (Tc) Surface Mount 8-SOP Advance (5x5)
Транзисторы полевые TPCA8105(TE12L,Q,M
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