| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVI |
| Packaging | Cut Tape (CT) |
| Part Status | Discontinued at Digi-Key |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Vgs (Max) | +20V, -25V |
| Input Capacitance (Ciss) (Max) @ Vds | 970pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 3A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VS-8 (2.9x1.5) |
| Package / Case | 8-SMD, Flat Lead |
MOSFET P-CH 30V 6A VS-8 - P-Channel 30V 6A (Ta) 700mW (Ta) Surface Mount VS-8 (2.9x1.5)
Транзисторы полевые TPCF8107,LF
Приведенная информация носит справочный характер и не является публичной офертой в соответствии с пунктом 2 статьи 437 ГК РФ. Общую стоимость с учётом доставки Вам сообщит менеджер.