| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIII-H |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 840mW (Ta) |
| Rds On (Max) @ Id, Vgs | 40 mOhm @ 2.4A, 10V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PS-8 (2.9x2.4) |
| Package / Case | 8-SMD, Flat Lead |
MOSFET P-CH 40V 4.8A PS-8 - P-Channel 40V 4.8A (Ta) 840mW (Ta) Surface Mount PS-8 (2.9x2.4)
Транзисторы полевые TPCP8103-H(TE85LFM
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