| Manufacturer | Taiwan Semiconductor Corporation |
| Series | - |
| Packaging | Tube |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 249pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 44W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4 Ohm @ 1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251 (IPAK) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
MOSFET N-CHANNEL 600V 2A TO251 - N-Channel 600V 2A (Tc) 44W (Tc) Through Hole TO-251 (IPAK)
Транзисторы полевые TSM2NB60CH C5G
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